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MCC - SILICON BIDIRECTIONAL DIAC

Numéro de référence DB3TG
Description SILICON BIDIRECTIONAL DIAC
Fabricant MCC 
Logo MCC 





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DB3TG fiche technique
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
Features
The three layer, two terminal, axial lead, hermetically sealed
diacs are designed specifically for triggering thyristors.
Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates
Compliant. See ordering information)
Moisture Sensitivity: Level 1 per J-STD-020C
Intended for use in thyrisitors phase control ,
circuits for lamp dimming, universal motor speed control ,and
heat control.
Maximum Ratings
Operating Temperature: -40oC to +125oC
Storage Temperature: -40oC to +125oC
Thermal Resistance Junction to Lead:167oC/W
Thermal Resistance Junction to Ambient: 400oC/W
Electrical Characteristics @ 25oC Unless Otherwise Specified
Power dissipation
on Printed
PC 150mW
Circuit(l=10mm)
TA=65oC
Repetitive Peak
on-state Current ITRM
2.0A
t p=10us,f=120Hz
Breakover Voltage
Min Typ Max
VBO 30 32 34V C=22nF(Note 3)
Breakover Voltage
Symmetry
| + VBO |
-|-V BO|
±2V
C=22nF(Note 3)
Output
Voltage(Note 2)
Vo(min)
5V
Dynamic breakover
voltage ( N o t e 2 )
V
9V(Min)
VBO and VF at
10mA
Breakover
Current(Note 2)
IBO(max)
15uA
C=22nF
Rise Time(Note 2) Tr 2us(max)
Leakage
Current(Note 2)
IB(max)
10uA
VB =0.5VBO(max)
Note:
1. Lead in Glass Exemption Applied, see EU Directive Annex 5.
2. Electrical characteristics applicable in both forward and
reverse directions.
3. Connected in parallel with the devices.
DB3TG
SILICON
BIDIRECTIONAL
DIAC
DO-35G
D
A
B
D
C
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
A --- .150 ---
B --- .079 ---
C --- .020 ---
D 1.083 --- 27.50
MAX
3.8
2.00
.52
---
NOTE
Revision: B
www.mccsemi.com
1 of 3
2011/06/21

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