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DB3TG Datasheet دیتاشیت PDF دانلود

دیتاشیت - Taiwan Semiconductor - 150mW Bi-directional Trigger Diode

شماره قطعه DB3TG
شرح مفصل 150mW Bi-directional Trigger Diode
تولید کننده Taiwan Semiconductor 
آرم Taiwan Semiconductor 


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DB3TG شرح
Small Signal Diode
DB3-DB3TG
150mW Bi-directional Trigger Diode
DO-35 Axial Lead
HERMETICALLY SEALED GLASS
Features
—Designed for through-Hole Device Type Mounting.
—Hermetically Sealed Glass.
—All external suface are corrosion resistant and
terminals are readily solderable.
—High reliability glass passivation insuring parameter
stability and protection against junction contamination.
—Pb free version and RoHS compliant
Mechanical Data
—Case :DO-35 Solder Hot Dip Tin (Sn) lead finish
—Terminal: Pure tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
—High temperature soldering guaranteed: 260°C/10s
—Marking : DB3/DB3TG
—Weight : 0.1255 gram (approximately)
D
A
B
C
Dimensions
A
B
C
D
Unit (mm) Unit (inch)
Min
0.45
3.05
25.4
1.53
Max
0.55
5.08
38.1
2.28
Min
0.018
0.120
1.000
0.060
Max
0.022
0.200
1.500
0.090
Ordering Information
Part No.
DB3/DB3TG RI
Package
DO-35
Packing
5Kpcs / 10" Reel
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Repetitive Peak Forward Current
Pulse Width=
20μsec
Thermal Resistance (Junction to Ambient) (Note 1)
Junction and Storage Temperature Range
Symbol
PD
IFRM
RθJA
TJ, TSTG
Value
150
2
400
-40 to + 125
Units
mW
A
°C/W
°C
Electrical Characteristics
Type Number
Break-over Voltage
Break-over Voltage Symmetry
Break-over Current
Maxiumn Leakage Current
Junction Capacitance
Output Voltage
Reverse Recovery Time
C= 22nF
C= 22nF
C= 22nF
VR= 0.5V
VR=0, f=1.0MHz
(Note2)
Symbol
VBO
+ / -VBO
IBO
IR
CJ
VO
Trr
DB3
32
+/-3
100
DB3TG
32
+/-2
15
10
22.0
5
1.5
Units
V
V
nA
μA
nF
V
μs
Notes:1. Valid provided that electrodes are kept at ambient temperature
Notes:2. Test Condition : IF=0.5A, RL=100
Version : C09

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