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IRF531 fiches techniques PDF

Inchange Semiconductor - N-Channel MOSFET Transistor

Numéro de référence IRF531
Description N-Channel MOSFET Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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IRF531 fiche technique
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF531
·FEATURES
·Low RDS(on)
·VGS Rated at ±20V
·Silicon Gate for Fast Switching Speed
·Rugged
·Low Drive Requirements
·DESCRITION
·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC
motor controls,relay and solenoid drivers.
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
80
±20
V
V
ID Drain Current-Continuous
14 A
IDM Drain Current-Single Plused
56 A
PD Total Dissipation @TC=25
79 W
Tj Max. Operating Junction Temperature -55~175
Tstg Storage Temperature
-55~175
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.9 /W
Rth j-a Thermal Resistance,Junction to Ambient 80 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn

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