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IRF452 fiches techniques PDF

Inchange Semiconductor - N-Channel MOSFET Transistor

Numéro de référence IRF452
Description N-Channel MOSFET Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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IRF452 fiche technique
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF452
DESCRIPTION
·11A,500V
·Low RDS(on) at high voltage
·Improved inductive ruggedness
·Low input Characteristics
·Fast switching times
·Extended safe operating area
APPLICATIONS
·Designed for applications such as switching regulators,
switching convertors ,motor drivers ,relay driver ,and drivers
for high power bipolar switching transistors requiring high
speed and low gate drive power.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
500
±20
V
V
Drain Current-continuous@ TC=2511 A
Total Dissipation@TC=25
125 W
Max. Operating Junction Temperature -55~150
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-A
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
0.83
30
/W
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn

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