|
|
Numéro de référence | IRF343 | ||
Description | N-Channel MOSFET Transistor | ||
Fabricant | Inchange Semiconductor | ||
Logo | |||
1 Page
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF343
DESCRIPTION
·VGS Rated at ±20V
·Silicon Gate for Fast Switching Speeds
·IDSS,VDS(on),SOA and VGS(th) specified at Elevated
temperature
·Rugged
APPLICATIONS
·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC
motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
350
±20
V
V
Drain Current-continuous@ TC=25℃ 8.3 A
Total Dissipation@TC=25℃
125 W
Max. Operating Junction Temperature -55~150 ℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.0 ℃/W
Rth j-A Thermal Resistance,Junction to Ambient 30 ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
|
|||
Pages | Pages 2 | ||
Télécharger | [ IRF343 ] |
No | Description détaillée | Fabricant |
IRF340 | N-Channel MOSFET Transistor | Inchange Semiconductor |
IRF340 | N-CHANNEL POWER MOSFETS | Samsung semiconductor |
IRF340 | TRANSISTORS N-CHANNEL(Vdss=400V/ Rds(on)0.55ohm/ Id=10A) | International Rectifier |
IRF340 | N-Channel Power MOSFETs/ 10A/ 350V/400V | Fairchild Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |