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Numéro de référence | IRF222 | ||
Description | N-Channel MOSFET Transistor | ||
Fabricant | Inchange Semiconductor | ||
Logo | |||
1 Page
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF222
DESCRIPTION
·Drain Current ID=4A@ TC=25℃
·Drain Source Voltage-
: VDSS= 200V(Min)
·Static Drain-Source On-Resistance
: RDS(on) =1.2Ω(Max)
·High Speed Applications
APPLICATIONS
·Switching power supplies
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
200 V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=25℃ 4 A
Total Dissipation@TC=25℃
40 W
Max. Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
Rth j-a Thermal Resistance,Junction to Ambient
3.12
30
℃/W
℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
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Pages | Pages 2 | ||
Télécharger | [ IRF222 ] |
No | Description détaillée | Fabricant |
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