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Número de pieza | DMP1100UCB4 | |
Descripción | P-CHANNEL ENHANCEMENT MODE MOSFET | |
Fabricantes | Diodes | |
Logotipo | ||
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No Preview Available ! DMP1100UCB4
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary (Typ @VGS = -4.5V, TA = +25°C)
BVDSS
-12V
RDS(ON)
65mΩ
Qg
9nC
Qgd
2.4nC
ID
-3.2A
Features and Benefits
Built-in G-S Protection Diode against ESD 2kV HBM
Ultra Small 0.8mm x 0.8mm Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications. It is a High performance MOSFET in ultra-small 0.8mm
x0.8mm package.
Portable Applications
Load Switch
Power Management Functions
Mechanical Data
Case: X2-WLB0808-4
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
UBM Opening: 203m
ESD PROTECTED
Top View
Ordering Information (Note 4)
Notes:
Part Number
DMP1100UCB4-7
Case
X2-WLB0808-4
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
9W = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: D = 2016)
M or M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2016
D
Jan Feb
12
2017
E
Mar
3
2018
F
Apr May
45
2019
G
Jun Jul
67
2020
H
Aug
8
Sep
9
2021
I
Oct
O
2022
J
Nov Dec
ND
DMP1100UCB4
Document number: DS38339 Rev. 2 - 2
1 of 7
www.diodes.com
April 2016
© Diodes Incorporated
1 page DMP1100UCB4
1
D=0.7
D=0.5
D=0.3
0.1
D=0.1
D=0.05
D=0.9
0.01
D=0.02
D=0.01
D=0.005
0.001
D=Single Pulse
RθJA(t) = r(t) * RθJA
RθJA = 187℃/W
Duty Cycle, D = t1 / t2
1E-05
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
10
100
1000
DMP1100UCB4
Document number: DS38339 Rev. 2 - 2
5 of 7
www.diodes.com
April 2016
© Diodes Incorporated
5 Page |
Páginas | Total 7 Páginas | |
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DMP1100UCB4 | P-CHANNEL ENHANCEMENT MODE MOSFET | Diodes |
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