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IR2133JPBF fiches techniques PDF

International Rectifier - 3-PHASE BRIDGE DRIVER

Numéro de référence IR2133JPBF
Description 3-PHASE BRIDGE DRIVER
Fabricant International Rectifier 
Logo International Rectifier 





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IR2133JPBF fiche technique
Data Sheet No. PD60107 revX
IR2133/IR2135(J&S)&(PbF)
IR2233/IR2235(J&S)&(PbF)
3-PHASE BRIDGE DRIVER
Features
Floating channel designed for bootstrap operation
Fully operational to +600V or+1200V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10V/12V to 20V DC and
up to 25V for transient
Undervoltage lockout for all channels
Over-current shut down turns off all six drivers
Independent 3 half-bridge drivers
Matched propagation delay for all channels
2.5V logic compatible
Outputs out of phase with inputs
All parts are also available LEAD-FREE
Product Summary
VOFFSET
IO+/-
VOUT
ton/off (typ.)
Deadtime (typ.)
600V or 1200V max.
200 mA / 420 mA
10 - 20V or 12 - 20V
750/700 ns
250 ns
Packages
Description
The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high speed
power MOSFET and IGBT driver with three independent high side and
low side referenced output channels for 3-phase applications. Propri-
etary HVIC technology enables ruggedized monolithic construction.
Logic inputs are compatible with CMOS or LSTTL outputs, down to
28-Lead SOIC
28-Lead PDIP
2.5V logic. An independent operational amplifier provides an analog
feedback of bridge current via an external current sense resistor. A
44-Lead PLCC w/o 12 leads
current trip function which terminates all six outputs can also be de-
rived from this resistor. A shutdown function is available to terminate all six outputs. An open drain FAULT signal is provided to
indicate that an over-current or undervoltage shutdown has occurred. Fault conditions are cleared with the FLT-CLR lead. The
output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are
matched to simplify use in high frequency applications. The floating channels can be used to drive N-channel power MOSFETs or
IGBTs in the high side configuration which operates up to 600 volts or 1200 volts.
Typical Connection
up to 600V or 1200V
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only.
Please refer to our Application Notes and DesignTips for proper circuit board layout.
www.irf.com
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