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Inchange Semiconductor - Silicon PNP Power Transistors

Numéro de référence D45C3
Description Silicon PNP Power Transistors
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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D45C3 fiche technique
INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
D45C3
DESCRIPTION
·Low Saturation Voltage
·Good Linearity of hFE
·Fast Switching Speeds
·Complement to Type D44C3
APPLICATIONS
·Designed for various specific and general purpose application
such as: output and driver stages of amplifiers operating at
frequencies from DC to greater than 1.0MHz series, shunt
and switching regulators; low and high frequency inverters/
converters and many others.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
-40 V
VCEO
Collector-Emitter Voltage
-30 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-4 A
ICM Collector Current-Peak
-6 A
IB Base Current-Continuous
Collector Power Dissipation
PC @TC=25
Tj Junction Temperature
Tstg Storage Temperature Range
-1 A
30 W
150
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
4.2 /W
isc websitewww.iscsemi.cn
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