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Numéro de référence | 80N06 | ||
Description | N-Channel MOSFET Transistor | ||
Fabricant | Inchange Semiconductor | ||
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1 Page
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
80N06
·DESCRIPTION
·Drain Current ID= 80A@ TC=25℃
·Drain Source Voltage-
: VDSS= 60V(Min)
·Fast Switching Speed
·APPLICATIONS
·General purpose power amplifier
·ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Drain Current-continuous@ TC=25℃
60
±30
80
V
V
A
ID(puls)
Pulse Drain Current
320 A
Ptot Total Dissipation@TC=25℃
150 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.0 ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
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Pages | Pages 2 | ||
Télécharger | [ 80N06 ] |
No | Description détaillée | Fabricant |
80N02 | NTD80N02 | ON Semiconductor |
80N03L | SPB80N03L | Siemens |
80N055 | NP80N055 | NEC |
80N06 | N-Channel MOSFET Transistor | Inchange Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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