|
|
Numéro de référence | 75N10 | ||
Description | N-Channel MOSFET Transistor | ||
Fabricant | Inchange Semiconductor | ||
Logo | |||
1 Page
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
75N10
·DESCRIPTION
·Drain Current ID= 75A@ TC=25℃
·Drain Source Voltage-
: VDSS= 100V(Min)
·Fast Switching Speed
·APPLICATIONS
·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Drain Current-continuous@ TC=25℃
100
±30
75
V
V
A
ID(puls)
Pulse Drain Current
200 A
Ptot Total Dissipation@TC=25℃
250 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
0.62 ℃/W
80 ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
|
|||
Pages | Pages 2 | ||
Télécharger | [ 75N10 ] |
No | Description détaillée | Fabricant |
75N10 | N-Channel MOSFET Transistor | Inchange Semiconductor |
75N10 | N-Channel Power MOSFET / Transistor | nELL |
75N120A | IXDN75N120A | IXYS Corporation |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |