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PDF IFN112 Data sheet ( Hoja de datos )
| Número de pieza | IFN112 | |
| Descripción | N-Channel Silicon Junction Field-Effect Transistor | |
| Fabricantes | InterFET Corporation | |
| Logotipo |  |
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D-4
IFN112
N-Channel Silicon Junction Field-Effect Transistor
01/99
¥ Low-Noise, High Gain
¥ Equivalent to Japanese 2SK112
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Storage Temperature Range
– 50 V
10 mA
360 mW
2.88 mW/°C
– 65°C to 200°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
V(BR)GSS
IGSS
VGS(OFF)
IDSS
Common Source Forward Transconductance gfs
Common Source Input Capacitance
Common Source Reverse Transfer Capacitance
Equivalent Short Circuit Input Noise Voltage
Ciss
Crss
e¯N
IFN112
Min Max
Unit
Process NJ132H
Test Conditions
– 50 V IG = – 1 µA, VDS = ØV
– 0.1 nA VDS = ØV, VGS = – 30V
– 0.25 – 1.2 V VDS = 15V, ID = 100 nA
1.2 9.0 mA VDS = 15V, VGS = ØV
7 34
Typ
12
3
2.5
mS VDS = 15V, VGS = ØV
pF
pF
nV/√Hz
VDS = 15V, VGS = ØV
VDS = 15V, VGS = ØV
VDS = 10V, ID = 5.0 mA
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 kHz
TOÐ18 Package
Dimensions in Inches (mm)
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
www.interfet.com
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet IFN112.PDF ] | |
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