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Número de pieza | DMN63D8LV | |
Descripción | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
Fabricantes | Diodes | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de DMN63D8LV (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Product Summary
V(BR)DSS
30V
RDS(ON)
4.2Ω @ VGS = 5V
2.8Ω @ VGS = 10V
ID
TA = 25°C
200mA
260mA
Description
This new generation MOSFET has been designed to minimize the
on-state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
• DC-DC Converters
• Power management functions
• Battery Operated Systems and Solid-State Relays
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc
DMN63D8LV
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Dual N-Channel MOSFET
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Small Surface Mount Package
• ESD Protected Gate
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT563
• Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.006 grams (approximate)
SOT563
D2 G1 S1
ESD PROTECTED
Top View
S2 G2 D1
Top View
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMN63D8LV-7
DMN63D8LV-13
Case
SOT563
SOT563
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
3D8 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Z = 2012)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2011
Y
Jan Feb
12
2012
Z
Mar
3
2013
A
Apr May
45
2014
B
Jun Jul
67
2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov Dec
ND
DMN63D8LV
Document number: DS36022 Rev. 2 - 2
1 of 6
www.diodes.com
August 2012
© Diodes Incorporated
1 page DMN63D8LV
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
BC
D
G
K
SOT563
Dim Min Max Typ
A 0.15 0.30 0.20
B 1.10 1.25 1.20
C 1.55 1.70 1.60
D-
- 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
K 0.55 0.60 0.60
M L 0.10 0.30 0.20
M 0.10 0.18 0.11
All Dimensions in mm
H
L
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C2 C2
G
Z
Y
X
C1
Dimensions
Z
G
X
Y
C1
C2
Value (in mm)
2.2
1.2
0.375
0.5
1.7
0.5
DMN63D8LV
Document number: DS36022 Rev. 2 - 2
5 of 6
www.diodes.com
August 2012
© Diodes Incorporated
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet DMN63D8LV.PDF ] |
Número de pieza | Descripción | Fabricantes |
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DMN63D8LV | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes |
DMN63D8LW | N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes |
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