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PDF DMN62D0SFD Data sheet ( Hoja de datos )
| Número de pieza | DMN62D0SFD | |
| Descripción | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
| Fabricantes | Diodes | |
| Logotipo |  |
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Product Summary
V(BR)DSS
60V
RDS(ON)
2Ω @ VGS = 10V
3Ω @ VGS = 5V
ID
TA = 25°C
540mA
430mA
Description and Applications
This new generation MOSFET has been designed to minimize the
on-state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• DC-DC Converters
• Power management functions
• Battery Operated Systems and Solid-State Relays
• Load switch
DMN62D0SFD
N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• ESD Protected Gate to 2kV
• Lead Free/RoHS Compliant (Note 1)
• Green Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: X1-DFN1212-3
• Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Solderable per MIL-STD-202, Method 208
• Terminals: Finish – NiPdAu over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.005 grams (approximate)
Drain
ESD PROTECTED TO 2kV
Top View
Bottom View
Gate
Body
Diode
Gate
Protection
Diode
Source
Equivalent Circuit
S
D
G
Top view
Pin-out
Ordering Information (Note 3)
Notes:
Part Number
DMN62D0SFD-7
Case
X1-DFN1212-3
1. No purposefully added lead.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com
Packaging
3000/Tape & Reel
Marking Information
K62
YM
K62 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2007
U
Jan Feb
12
2008
V
Mar Apr
34
2009
W
May Jun
56
2010
X
Jul Aug
78
2011
Y
Sep Oct
9O
2012
Z
Nov Dec
ND
DMN62D0SFD
Document number: DS35473 Rev. 3 - 2
1 of 6
www.diodes.com
January 2012
© Diodes Incorporated
1 page  
DMN62D0SFD
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01 D = 0.01
D = 0.005
D = Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Fig. 12 Transient Thermal Resistance
RθJA(t) = r(t) * RθJA
RθJA = 261°C/W
Duty Cycle, D = t1/t2
10 100 1,000
Package Outline Dimensions
A
A3
A1
D
e
b1
E (2x)
L
b
Suggested Pad Layout
X1-DFN1212-3
Dim Min Max Typ
A 0.47 0.53 0.50
A1 0 0.05 0.02
A3 - - 0.13
b 0.27 0.37 0.32
b1 0.17 0.27 0.22
D 1.15 1.25 1.20
E 1.15 1.25 1.20
e - - 0.80
L 0.25 0.35 0.30
All Dimensions in mm
Y2
DMN62D0SFD
Document number: DS35473 Rev. 3 - 2
X
Y
X1
(2x)
Y1
(2x)
C
Dimensions
C
X
X1
Y
Y1
Y2
Value (in mm)
0.80
0.42
0.32
0.50
0.50
1.50
5 of 6
www.diodes.com
January 2012
© Diodes Incorporated
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet DMN62D0SFD.PDF ] | |
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