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22N10 fiches techniques PDF

Inchange Semiconductor - N-Channel MOSFET Transistor

Numéro de référence 22N10
Description N-Channel MOSFET Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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22N10 fiche technique
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
22N10
·FEATURES
·Drain Current ID= 22A@ TC=25
·Drain Source Voltage-
: VDSS= 100V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.08Ω(Max)
·Fast Switching
·APPLICATIONS
·Switching regulators
·Switching converters,motor drivers,relay drivers
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
100
±30
V
V
ID Drain Current-Continuous
22 A
IDM Drain Current-Single Plused
50 A
PD Total Dissipation @TC=25
100 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.5 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn

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