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21N60 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Inchange Semiconductor - N-Channel MOSFET Transistor

شماره قطعه 21N60
شرح مفصل N-Channel MOSFET Transistor
تولید کننده Inchange Semiconductor 
آرم Inchange Semiconductor 


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21N60 شرح
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
21N60
·FEATURES
·Drain Current ID= 21A@ TC=25
·Drain Source Voltage-
: VDSS= 600V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.32Ω(Max)
·Fast Switching
·APPLICATIONS
·Switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
600
±30
V
V
ID Drain Current-Continuous
21 A
IDM Drain Current-Single Plused
84 A
PD Total Dissipation @TC=25
140 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
0.42 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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