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2SC2412KQLT1 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Leshan Radio Company - General Purpose Transistors

شماره قطعه 2SC2412KQLT1
شرح مفصل General Purpose Transistors
تولید کننده Leshan Radio Company 
آرم Leshan Radio Company 


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2SC2412KQLT1 شرح
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
1
BASE
3
COLLECTOR
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
T stg
50 V
60 V
7.0 V
150 mAdc
0.2 W
150 °C
-55 ~+150 °C
DEVICE MARKING
2SC2412K*LT1 =G1F
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Collector–Emitter Breakdown Voltage
(IC = 1 mA)
Emitter–Base Breakdown Voltage
(IE = 50 µA)
Collector–Base Breakdown Voltage
(IC = 50 µA)
Collector Cutoff Current
(VCB = 60 V)
Emitter cutoff current
(VEB = 7 V)
Collector-emitter saturation voltage
(IC/ IB = 50 mA / 5m A)
DC current transfer ratio
(V CE = 6 V, I C= 1mA)
Transition frequency
(V CE = 12 V, I E= – 2mA, f =30MHz )
Output capacitance
(V CB = 12 V, I E= 0A, f =1MHz )
Symbol
V (BR)CEO
V (BR)EBO
V (BR)CBO
I CBO
I EBO
V CE(sat)
h FE
fT
C ob
Min
50
7
60
120
h FE values are classified as follows:
*Q
R
hFE
120~270
180~390
S
270~560
2SC2412K*LT1
3
1
2
CASE 318–07, STYLE 6
SOT– 23 (TO–236AB)
Typ Max Unit
— —V
— —V
— —V
— 0.1 µA
— 0.1 µA
— 0.4 V
–– 560 ––
180 –– MHz
2.0 3.5 pF
M36–1/3

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2SC2412KQLT1 General Purpose Transistors Leshan Radio Company
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