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Datasheet A2I20H060GNR1-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
A2I Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | A2I20D020GNR1 | RF LDMOS Wideband Integrated Power Amplifiers Freescale Semiconductor Technical Data
Document Number: A2I20D020N Rev. 0, 5/2016
RF LDMOS Wideband Integrated Power Amplifiers
The A2I20D020N wideband integrated circuit is designed with on--chip matching that makes it usable from 1400 to 2200 MHz. This multi--stage structure is rated for 20 to  Freescale Semiconductor amplifier | | |
| 2 | A2I20D020NR1 | RF LDMOS Wideband Integrated Power Amplifiers Freescale Semiconductor Technical Data
Document Number: A2I20D020N Rev. 0, 5/2016
RF LDMOS Wideband Integrated Power Amplifiers
The A2I20D020N wideband integrated circuit is designed with on--chip matching that makes it usable from 1400 to 2200 MHz. This multi--stage structure is rated for 20 to Freescale Semiconductor amplifier | | |
| 3 | A2I20H060GNR1 | RF LDMOS Wideband Integrated Power Amplifiers Freescale Semiconductor Technical Data
Document Number: A2I20H060N Rev. 0, 2/2016
RF LDMOS Wideband Integrated Power Amplifiers
The A2I20H060N wideband integrated circuit is an asymmetrical Doherty designed with on--chip matching that makes it usable from 1800 to 2200 MHz. This multi--stage struc Freescale Semiconductor amplifier | | |
| 4 | A2I20H060NR1 | RF LDMOS Wideband Integrated Power Amplifiers Freescale Semiconductor Technical Data
Document Number: A2I20H060N Rev. 0, 2/2016
RF LDMOS Wideband Integrated Power Amplifiers
The A2I20H060N wideband integrated circuit is an asymmetrical Doherty designed with on--chip matching that makes it usable from 1800 to 2200 MHz. This multi--stage struc Freescale Semiconductor amplifier | |
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