(PDF) MBRB20200CT-B Datasheet - Schottky Barrier RECTIFIER

Número de pieza	MBRB20200CT-B
Descripción	Schottky Barrier RECTIFIER
Fabricantes	JCET
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No Preview Available ! JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-263-2L Plastic-Encapsulate Diodes MBRB000CT-B SCHOTTKY BARRIER RECTIFIER FEATURE  Schottky Barrier Chip  Guard Ring Die Construction for Transient Protection  Low Power Loss, High Efficiency  High Surge Capability  High Current Capability and Low Forward Voltage Drop TO-263-2L 1. ANODE 2. CATHODE 3. ANODE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VRRM VRWM VR(RMS) IO IFSM PD RθJA TJ Tstg Parameter Peak repetitive reverse voltage Working peak reverse voltage RMS reverse voltage Average rectified output current Non-repetitive peak forward surge current @8.3ms half sine wave Power dissipation Thermal resistance from junction to ambient Junction temperature Storage temperature Value 200 140 20 150 2 50 125 -55~+150 Unit V V A A W ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Reverse voltage =V(BR) IR 0.1mA 200 Reverse current =IR VR 200V )RUZDUGYROWDJH=VF* IF 10A Total capacitance *Pulse test ==Ctot VR 4V,f 1MHz Typ 110 Max 0.1 0.92 Unit V mA V pF www.cj-elec.com 1 A-1,May,2015 1 page

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PDF MBRB20200CT-B Data sheet ( Hoja de datos )