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PDF UTC9013 Data sheet ( Hoja de datos )
| Número de pieza | UTC9013 | |
| Descripción | NPN EPITAXIAL SILICON TRANSISTOR | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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UTC 9013
NPN EPITAXIAL SILICON TRANSISTOR
1W OUTPUT AMPLIFIER OF
POTABLE RADIOS IN CLASS B
PUSH-PULL OPERATION
FEATURES
*High total power dissipation. (625mW)
*High collector current. (500mA)
*Excellent hFE linearity.
*Complementary to UTC 9012
1
TO-92
1: EMITTER 2: BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
RATING
Collector-base voltage
VCBO
40
Collector-emitter voltage
VCEO
20
Emitter-base voltage
VEBO
5
Collector current
Ic 500
Collector dissipation
Pc 625
Junction Temperature
Tj 150
Storage Temperature
TSTG
-55 ~ +150
UNIT
V
V
V
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-base breakdown voltage BVCBO
Ic=100µA, IE=0
40
Collector-emitter breakdown voltage BVCEO
Ic=1mA, IB=0
20
Emitter-base breakdown voltage
BVEBO
IE=100µA, Ic=0
5
Collector cutoff current
ICBO
VCB=25V, IE=0
Emitter cutoff current
IEBO
VEB=3V, IC=0
DC current gain
hFE1
VCE=1V,Ic=50mA
64
hFE2
VCE=1V,Ic=500mA
40
Collector-emitter saturation voltage VCE(sat)
Ic=500mA, IB=50mA
Base-emitter saturation voltage
VBE(sat)
Ic=500mA, IB=50mA
Base-emitter on voltage
VBE(on)
VCE=1V, Ic=10mA
0.6
TYP
120
120
0.16
0.91
0.67
MAX
100
100
300
0.6
1.2
0.7
UNIT
V
V
V
nA
nA
V
V
V
CLASSIFICATION OF hFE1
RANK
D
E
RANGE
64-91
78-112
F
96-135
G
112-166
H
144-202
I
190-300
UTC UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R201-030,A
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet UTC9013.PDF ] | |
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