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PDF ACE7407A Data sheet ( Hoja de datos )

Número de pieza ACE7407A
Descripción P-Channel Enhancement Mode MOSFET
Fabricantes ACE Technology 
Logotipo ACE Technology Logotipo



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ACE7407A
P-Channel Enhancement Mode MOSFET
Description
The ACE7407A is the P-Channel logic enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits where high-side switching, and low
in-line power loss are needed in a very small outline surface mount package.
Features
-20V/-3.4A, RDS (ON)= 100mΩ@VGS=-4.5V
-20V/-2.4A, RDS (ON)= 125mΩ@VGS=-2.5V
-20V/-1.7A, RDS (ON)= 150mΩ@VGS=-1.8V
-20V/-1.0A, RDS (ON)= 220mΩ@VGS=-1.25V
Super high density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current capability
Application
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
VER 1.1 1

1 page




ACE7407A pdf
Typical Performance Characteristics
Source-Drain Diode Forward Voltage
ACE7407A
P-Channel Enhancement Mode MOSFET
On-Resistance vs. Gate-to-Source Voltage
VSD-Source-to-Drain Voltage (V)
Threshold Voltage
VGS-Gate-to-Source Voltage (V)
Single Pulse Power
TJ-Temperature()
Time (sec)
Normalized Thermal Transient Impedance, Junction-to Foot
Square Wave Pulse Duration (sec)
VER 1.1 5

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