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Número de pieza | ACE7401B | |
Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | ACE Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de ACE7401B (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! ACE7401B
P-Channel Enhancement Mode Field Effect Transistor
Description
The ACE7401B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate
charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.
Features
VDS(V)=-30V
ID=-29A (VGS=-10V)
RDS(ON)<13mΩ (VGS=-20V)
RDS(ON)<14mΩ (VGS=-10V)
RDS(ON)<17mΩ (VGS=-5V)
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
TA=25 OC
TA=100 OC
Drain Current (Pulse)C
Drain Current (Continuous)
TA=25 OC
TA=75 OC
Power Dissipation B
TA=25 OC
TA=100 OC
Power Dissipation A
TA=25 OC
TA=70 OC
Operating and Storage Temperature Range
Symbol Max Unit
VDSS -30 V
VGSS ±25 V
-29
ID -23
IDM -60 A
-12
IDSM
-9.7
PD
PDSM
29
12
W
3.1
2
TJ,TSTG -55 to 150 OC
Thermal Characteristics
Parameter
Symbol Typ Max Units
Maximum Junction-to-Ambient A
t≦10s
Maximum Junction-to-Ambient AD Steady-State
RθJA
30 40
60 75 OC/W
Maximum Junction-to-Lead Steady-State RθJL 3.5 4.2
VER 1.2 1
1 page ACE7401B
P-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
VER 1.2 5
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet ACE7401B.PDF ] |
Número de pieza | Descripción | Fabricantes |
ACE7401 | P-Channel Enhancement Mode MOSFET | ACE Technology |
ACE7401B | P-Channel Enhancement Mode Field Effect Transistor | ACE Technology |
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