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PDF ACE4940M Data sheet ( Hoja de datos )
| Número de pieza | ACE4940M | |
| Descripción | Dual N-Channel 40-V MOSFET | |
| Fabricantes | ACE Technology | |
| Logotipo |  |
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ACE4940M
Dual N-Channel 40-V MOSFET
Description
The ACE4940M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM applications. The source leads are separated to
allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Features
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
Applications
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
TA=25℃
TA=70℃
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TA=25℃
TA=70℃
Operating temperature / storage temperature
Symbol Limit Units
VDS 40 V
VGS ±20 V
8.3
ID
A
6.8
IDM 50 A
IS 3 A
2.1
PD
W
1.3
TJ/TSTG -55~150 ℃
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient a
t <= 10 sec
Steady State
RθJA
Maximum
62.5
110
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.2 1
1 page  
Typical Performance Characteristics
ACE4940M
Dual N-Channel 40-V MOSFET
Qg - Total Gate Charge (nC)
7. Gate Charge
TJ -JunctionTemperature(°C)
8. Normalized On-Resistance Vs
Junction Temperature
VDS Drain to Source Voltage (V)
9. Safe Operating Area
t1 TIME (SEC)
10. Single Pulse Maximum Power Dissipation
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
VER 1.2 5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet ACE4940M.PDF ] | |
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