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ACE4940M Datasheet دیتاشیت PDF دانلود

دیتاشیت - ACE Technology - Dual N-Channel 40-V MOSFET

شماره قطعه ACE4940M
شرح مفصل Dual N-Channel 40-V MOSFET
تولید کننده ACE Technology 
آرم ACE Technology 


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ACE4940M شرح
ACE4940M
Dual N-Channel 40-V MOSFET
Description
The ACE4940M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM applications. The source leads are separated to
allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Features
Low rDS(on) trench technology
Low thermal impedance
Fast switching speed
Applications
White LED boost converters
Automotive Systems
Industrial DC/DC Conversion Circuits
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
TA=25
TA=70
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TA=25
TA=70
Operating temperature / storage temperature
Symbol Limit Units
VDS 40 V
VGS ±20 V
8.3
ID
A
6.8
IDM 50 A
IS 3 A
2.1
PD
W
1.3
TJ/TSTG -55~150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient a
t <= 10 sec
Steady State
RθJA
Maximum
62.5
110
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.2 1

قانون اساسیصفحه 7
دانلود [ ACE4940M دیتاشیت ]



دیتاشیت توصیه

شماره قطعه شرح مفصل تولید کنندگان
ACE4940M Dual N-Channel 40-V MOSFET ACE Technology
ACE Technology

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