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17N60 fiches techniques PDF

Inchange Semiconductor - N-Channel Mosfet Transistor

Numéro de référence 17N60
Description N-Channel Mosfet Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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17N60 fiche technique
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
17N60
·FEATURES
·Drain Current ID= 17A@ TC=25
·Drain Source Voltage
: VDSS= 600V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.45Ω(Max)
·Fast Switching
·APPLICATIONS
·Switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
600
±30
V
V
ID Drain Current-Continuous
17 A
IDM Drain Current-Single Plused
68 A
PD Total Dissipation @TC=25
250 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
0.5 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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