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Numéro de référence | 17N60 | ||
Description | N-Channel Mosfet Transistor | ||
Fabricant | Inchange Semiconductor | ||
Logo | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
17N60
·FEATURES
·Drain Current ID= 17A@ TC=25℃
·Drain Source Voltage
: VDSS= 600V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.45Ω(Max)
·Fast Switching
·APPLICATIONS
·Switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
600
±30
V
V
ID Drain Current-Continuous
17 A
IDM Drain Current-Single Plused
68 A
PD Total Dissipation @TC=25℃
250 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
0.5 ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
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Pages | Pages 2 | ||
Télécharger | [ 17N60 ] |
No | Description détaillée | Fabricant |
17N60 | N-Channel Mosfet Transistor | Inchange Semiconductor |
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