DataSheetWiki


15N60 fiches techniques PDF

Inchange Semiconductor - N-Channel Mosfet Transistor

Numéro de référence 15N60
Description N-Channel Mosfet Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





1 Page

No Preview Available !





15N60 fiche technique
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·FEATURES
·Drain Current ID= 15A@ TC=25
·Drain Source Voltage
: VDSS= 600V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.44Ω(Max)
·High Switching Speed
·APPLICATIONS
·Switching regulators
isc Product Specification
15N60
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
600
±30
V
V
ID Drain Current-Continuous
15 A
IDM Drain Current-Single Plused
60 A
PD Total Dissipation @TC=25
300 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature
-55~150
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn

PagesPages 2
Télécharger [ 15N60 ]


Fiche technique recommandé

No Description détaillée Fabricant
15N60 N-Channel Mosfet Transistor Inchange Semiconductor
Inchange Semiconductor
15N60 N-CHANNEL POWER MOSFET Unisonic Technologies
Unisonic Technologies
15N60C3 SPP15N60C3 Infineon
Infineon
15N60HS High Speed IGBT Infineon
Infineon

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche