DataSheetWiki


11N90 fiches techniques PDF

Inchange Semiconductor - N-Channel Mosfet Transistor

Numéro de référence 11N90
Description N-Channel Mosfet Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





1 Page

No Preview Available !





11N90 fiche technique
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
11N90
·FEATURES
·Drain Current ID= 11A@ TC=25
·Drain Source Voltage-
: VDSS= 900V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 1.1Ω(Max)
·Fast Switching
·APPLICATIONS
·Switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
900
±30
V
V
ID Drain Current-Continuous
11 A
IDM Drain Current-Single Plused
44 A
PD Total Dissipation @TC=25
160 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
0.78 /W
62.5 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn

PagesPages 2
Télécharger [ 11N90 ]


Fiche technique recommandé

No Description détaillée Fabricant
11N90 N-Channel Mosfet Transistor Inchange Semiconductor
Inchange Semiconductor
11N90 N-CHANNEL POWER MOSFET Unisonic Technologies
Unisonic Technologies
11N90C FQA11N90C Fairchild Semiconductor
Fairchild Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche