|
|
Numéro de référence | RB411D | ||
Description | Schottky Barrier Diode | ||
Fabricant | Kexin | ||
Logo | |||
1 Page
SMD Type
Schottky Barrier Diode
KB411D(RB411D)
Diodes
Features
Small surface mounting type
Low VF. (VF=0.43V Typ. at 0.5A)
High reliability.
Silicon epitaxial planar
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Reverse voltage
DC Reverse voltage
Mean rectifying current
Forward current surge peak
Junction temperature
Storage temperature
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
Rating
40
20
0.5
3
125
-40 to +125
Unit
V
V
A
A
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Forwarad voltage
Reverse current
Capacitance between terminal
Symbol
Testconditons
VF1 IF=500mA
VF2 IF=10mA
IR1 VR=10V
CT VR=10V , f=1MHz
Min Typ Max Unit
0.50 V
0.30 V
30 A
20 pF
Marking
Marking
D3E
www.kexin.com.cn 1
|
|||
Pages | Pages 1 | ||
Télécharger | [ RB411D ] |
No | Description détaillée | Fabricant |
RB411 | 500mA Schottky Brrier Diode | Shanghai Sunrise Electronics |
RB411 | Schottky barrier diode | ROHM Semiconductor |
RB411 | 20 to 40 Volts 0.5 Amp Surface Mount Schottky Barrier Diode | Micro Commercial Components |
RB411D | Schottky Barrier Diode | Kexin |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |