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RB717F fiches techniques PDF

LGE - Schottky Barrier Diode

Numéro de référence RB717F
Description Schottky Barrier Diode
Fabricant LGE 
Logo LGE 





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RB717F fiche technique
MMBD717
Schottky Barrier Diode
SOT-323
Features
— High reliability type.
— Low VF.
— High reliability.
Applications
— Low current rectification.
Ordering Information
Type No.
RB717F
Marking
3E
Dimensions in inches and (millimeters)
Package Code
SOT-323
MAXIMUM RATING @ Ta=25unless otherwise specified
Characteristic
Symbol
Limits
Unit
Repetitive peak reverse Voltage
VRM
40
V
DC Reverse Voltage
VR 40
V
Average rectified forward current
IO 30
mA
Forward current surge peak(60Hz.1cyc)
IFSM
200
mA
Power Dissipation
Operating Junction Temperature Range
Pd 200
Tj 125
mW
Storage Temperature Range
TSTG
-45 to +125
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Characteristic
Symbol
Min TYP MAX UNIT Test Condition
Forward Voltage
Reverse Leakage Current
Diode Capacitance
VF
IR
CD
-
0.37 V
IF=1.0mA
- 1.0 μA VR=10V
- 2.0
pF VR=1.0V,f=1MHz
http://www.luguang.cn

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