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JCET - Schottky barrier Diode

Numéro de référence RB715F
Description Schottky barrier Diode
Fabricant JCET 
Logo JCET 





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RB715F fiche technique
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Diodes
RB715F SCHOTTKY BARRIER DIODE
FEATURES:
Extra small power mold type
Low VF
High reliability
MARKING: 3D
SOT-323
1
3
2
Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings @Ta=25
Parameter
Symbol
Peak reverse voltage
VRM
DC reverse voltage
&1uRrQreUnHtS#HWWLWLYHPPeVak )orward 6urge
Average forward current
VR
IFSM
IO
Power dissipation
PD
Thermal Resistance Junction to Ambient 5ș-$
Junction temperature
Tj
Storage temperature
Tstg
Limit
40
40
200
30
200
500
125
-55+~150
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Reverse voltage leakage current
Forward voltage
Capacitance between terminals
Symbol
IR
VF
CT
Test conditions
VR=10V
IF=1mA
VR=1V, f=1MHz
Min Typ
2.0
Unit
V
V
mA
mA
mW
/W
Max
1
0.37
Unit
μA
V
pF
www.cj-elec.com
1
D,Oct,2015

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