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Numéro de référence | RB706F-40 | ||
Description | Schottky Barrier Diode | ||
Fabricant | Taiwan Semiconductor | ||
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1 Page
Small Signal
Features
◇ Low reverse current, high reliability
◇ Surface device type mounting
◇ Moisture sensitivity level 1
◇ Matte Tin(Sn) lead finish with Nickel(Ni) underplate
◇ Pb free version and RoHS compliant
◇ Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Mechanical Data
◇ Case : SOT-323 small outline plastic package
◇ Terminal : Matte tin plated, lead free, solderable
per MIL-STD-202, method 208 guaranteed
◇ High temperature soldering guaranteed : 260°C/10s
◇ Polarity : Indicated by cathode band
◇ Weight : 5 ± 0.5 mg
◇ Marking Code : ZA
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Parameter
Repetitive Peak Reverse Voltage
Reverse Voltage
Mean Forward Current
Non-Repetitive Peak Forward Surge Current
Thermal Resistance (Junction to Ambient)
Junction Temperature
Storage Temperature Range
( t = 8.3 ms )
Symbol
VRRM
VR
IO
IFSM
RθJA
TJ
TSTG
Electrical Characteristics
Parameter
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Current
Junction Capacitance
IR = 10 μA
IF = 1 mA
VR = 10 V
VR = 1 V , f = 1.0 MHz
Symbol
V(BR)
VF
IR
CJ
RB706F-40
Low VF SMD Schottky Barrier Diode
SOT-323
Value
45
40
30
0.2
500
125
-55 to + 125
Min Max
45 -
- 0.37
-1
2 (TYP)
Units
V
V
mA
A
oC/W
oC
oC
Units
V
V
μA
pF
Version : B14
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Pages | Pages 5 | ||
Télécharger | [ RB706F-40 ] |
No | Description détaillée | Fabricant |
RB706F-40 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE | SEMTECH |
RB706F-40 | Schottky Barrier Diodes | LGE |
RB706F-40 | Schottky Barrier Diode | Taiwan Semiconductor |
RB706F-40 | Schottky barrier Diode | JCET |
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