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PDF NP75N04VUK Data sheet ( Hoja de datos )
| Número de pieza | NP75N04VUK | |
| Descripción | N-channel Power MOS FET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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Preliminary Data Sheet
NP75N04VUK
40 V – 75 A – N-channel Power MOS FET
Application: Automotive
R07DS0954EJ0100
Rev.1.00
Nov 20, 2012
Description
The NP75N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Super low on-state resistance
RDS(on) = 5.7 m MAX. (VGS = 10 V, ID = 38 A)
Low Ciss: Ciss = 1630 pF TYP. (VDS = 25 V)
Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
NP75N04VUK-E1-AY *1
NP75N04VUK-E2-AY *1
Lead Plating
Pure Sn (Tin)
Packing
Tape 2500 p/reel
Taping (E1 type)
Taping (E2 type)
Note: *1 Pb-free (This product does not contain Pb in the external electrode)
Package
TO-252 (MP-3ZP)
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) *1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Repetitive Avalanche Current *2
Repetitive Avalanche Energy *2
Tstg
IAR
EAR
Notes: *1 TC = 25°C, PW 10 s, Duty Cycle 1%
*2 RG = 25 , VGS = 20 V 0 V
Ratings
40
20
75
225
75
1.2
175
–55 to +175
22
48
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
2.00 °C/W
125 °C/W
R07DS0954EJ0100 Rev.1.00
Nov 20, 2012
Page 1 of 6
1 page  
NP75N04VUK
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
10
8
6
4
2
0
–100 –50 0
VGS = 10 V
ID = 38 A
Pulsed
50 100 150 200
Tch - Channel Temperature - °C
1000
100
10
SWITCHING CHARACTERISTICS
VDD = 20 V
VGS = 10 V
RG = 0 Ω
td(off)
td(on)
tf
tr
1
0.1 1 10 100
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
VGS = 10 V
100
VGS = 0 V
10
1
0.1
0
Pulsed
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VF(S-D) - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
Ciss
100
Coss
Crss
VGS = 0 V
f = 1 MHz
10
0.1
1
10 100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
35
30
VDD = 32 V
20 V
8V
25
14
12
10
20 8
15 6
VGS
10 4
VDS
5
2
ID = 75 A
00
0 5 10 15 20 25 30 35
QG- Gate Charge - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
di/dt = 100 A/μs
VGS = 0 V
1
0.1 1 10 100
IF - Drain Current - A
R07DS0954EJ0100 Rev.1.00
Nov 20, 2012
Page 5 of 6
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NP75N04VUK.PDF ] | |
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