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PDF NP45N06PUK Data sheet ( Hoja de datos )
| Número de pieza | NP45N06PUK | |
| Descripción | N-channel Power MOS FET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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Preliminary Data Sheet
NP45N06VUK, NP45N06PUK
60 V – 45 A – N-channel Power MOS FET
Application: Automotive
R07DS0953EJ0100
Rev.1.00
Nov 20, 2012
Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
Super low on-state resistance
RDS(on) = 9.6 m MAX. (VGS = 10 V, ID = 23 A)
Low Ciss: Ciss = 1690 pF TYP. (VDS = 25 V)
Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
NP45N06VUK-E1-AY *1
NP45N06VUK-E2-AY *1
NP45N06PUK-E1-AY *1
NP45N06PUK-E2-AY *1
Lead Plating
Pure Sn (Tin)
Packing
Tape 2500 p/reel
Taping (E1 type)
Taping (E2 type)
Tape 800 p/reel
Taping (E1 type)
Taping (E2 type)
Note: *1 Pb-free (This product does not contain Pb in the external electrode)
Package
TO-252 (MP-3ZP)
TO-263 (MP-25ZP)
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) *1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation
(TA = 25°C)
NP45N06VUK
NP45N06PUK
PT2
Channel Temperature
Tch
Storage Temperature
Repetitive Avalanche Current *2
Repetitive Avalanche Energy *2
Tstg
IAR
EAR
Notes: *1 TC = 25°C, PW 10 s, Duty Cycle 1%
*2 RG = 25 , VGS = 20 V 0 V
Ratings
60
20
45
135
75
1.2
1.8
175
–55 to +175
19
36
Unit
V
V
A
A
W
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
NP45N06VUK
NP45N06PUK
2.00 °C/W
125 °C/W
83.3 °C/W
R07DS0953EJ0100 Rev.1.00
Nov 20, 2012
Page 1 of 8
1 page  
NP45N06VUK, NP45N06PUK
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
160
140
120
100
80
60
40
20 VGS = 10 V
Pulsed
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
4
3
2
1
0
–100 –50 0
VDS = VGS
ID = 250 μA
50 100 150 200
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
20
16
12
8
4
VGS = 10 V
Pulsed
0
0.1 1 10 100 1000
ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
100
10
TA = –55°C
25°C
85°C
150°C
1 175°C
0.1
0.01
0.001
0
VDS = 5 V
Pulsed
123456
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
TA = –55°C
25°C
85°C
150°C
175°C
10
VDS = 5 V
Pulsed
1
0.1 1
10 100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
16
12
8
4
ID = 23 A
Pulsed
0
0 5 10 15 20
VGS - Gate to Source Voltage - V
R07DS0953EJ0100 Rev.1.00
Nov 20, 2012
Page 5 of 8
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet NP45N06PUK.PDF ] | |
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