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Número de pieza | NP45N06VDK | |
Descripción | N-channel Power MOS FET | |
Fabricantes | Renesas | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de NP45N06VDK (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! NP45N06VDK
60 V – 45 A – N-channel Power MOS FET
Application: Automotive
Data Sheet
R07DS1295EJ0100
Rev.1.00
Oct 26, 2015
Description
NP45N06VDK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Super low on-state resistance
⎯ RDS(on)1 = 11.6 mΩ MAX. (VGS = 10 V, ID = 23 A)
• Low Ciss: Ciss = 1530 pF TYP. (VDS = 25 V)
• Designed for automotive application and AEC-Q101 qualified
Outline
Drain
Gate
Body
Diode
Source
TO-252(MP-3ZP)
Equivalent circuit
Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred.
Ordering Information
Part No.
NP45N06VDK-E1-AY *1
NP45N06VDK-E2-AY *1
Lead Plating
Pure Sn (Tin)
Packing
Tape 2500 p/reel
Taping (E1 type)
Taping (E2 type)
Note: *1. Pb-free (This product does not contain Pb in the external electrode)
Package
TO-252(MP-3ZP)
R07DS1295EJ0100 Rev.1.00
Oct 26, 2015
Page 1 of 7
1 page NP45N06VDK
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
150
125
100
75
50
25 VGS=10V
Pulsed
0
0123
VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
3
2
1
VDS = VGS
ID=250μA
0
-100 -50 0 50 100 150 200
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
25
20
VGS=10V
4.5V
15
10
5
0
0.1 1 10
ID - Drain Current - A
Pulsed
100 1000
R07DS1295EJ0100 Rev.1.00
Oct 26, 2015
FORWARD TRANSFER CHARACTERISTICS
100
10 TA=175°C
75°C
25°C
1 -55°C
0.1
0.01
VDS = 10V
Pulsed
0.001
01234
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
CURRENT
100
DRAIN
TA=175°C
150°C
75°C
25°C
-55°C
10
VDS = 5V
Pulsed
1
0.1 1 10 100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
25
Pulsed
20
15
10
5
ID=23A
0
0 5 10 15 20
VGS - Gate to Source Voltage - V
Page 5 of 7
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet NP45N06VDK.PDF ] |
Número de pieza | Descripción | Fabricantes |
NP45N06VDK | N-channel Power MOS FET | Renesas |
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