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PDF NP16N06QLK Data sheet ( Hoja de datos )
| Número de pieza | NP16N06QLK | |
| Descripción | Dual N-channel Power MOS FET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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Data Sheet
NP16N06QLK
60 V – 16 A – Dual N-channel Power MOS FET
Application: Automotive
R07DS1290EJ0101
Rev.1.01
Oct 27, 2015
Description
NP16N06QLK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Super low on-state resistance
⎯ RDS(on)1 = 39 mΩ MAX. (VGS = 10 V, ID = 8 A)
⎯ RDS(on)2 = 60 mΩ MAX. (VGS = 4.5 V, ID = 4 A)
• Low Ciss: Ciss = 500 pF TYP. (VDS = 25 V)
• Designed for automotive application and AEC-Q101 qualified
• Small size package 8-pin HSON dual
Outline
Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred.
Ordering Information
Part No.
NP16N06QLK-E1-AY *1
NP16N06QLK-E2-AY *1
Lead Plating
Pure Sn (Tin)
Packing
Tape 2500 p/reel
Taping (E1 type)
Taping (E2 type)
Note: *1. Pb-free (This product does not contain Pb in the external electrode)
Package
8-pin HSON dual
R07DS1290EJ0101 Rev.1.01
Oct 27, 2015
Page 1 of 7
1 page  
NP16N06QLK
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
35
30
25
20
15
10
5
0
0
VGS=10V
Pulsed
0.2 0.4 0.6 0.8 1 1.2
VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
4
3
2
1
VDS = VDS
ID=250μA
0
-100
-50
0
50 100 150 200
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
60
50
40
30
20
10 VGS=10V
Pulsed
0
0.1 1 10 100
ID - Drain Current - A
R07DS1290EJ0101 Rev.1.01
Oct 27, 2015
FORWARD TRANSFER CHARACTERISTICS
100
10 TA=175°C
75°C
25°C
1 -55°C
0.1
0.01
VDS = 10V
Pulsed
0.001
01234
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
CURRENT
100
DRAIN
TA=150°C
125°C
25°C
-55°C
10
VDS = 5V
Pulsed
1
0.1 1 10 100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
60
Pulsed
50
40
30
20
ID=3.2A
8.0A
16.0A
10
0
0 5 10 15 20
VGS - Gate to Source Voltage - V
Page 5 of 7
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet NP16N06QLK.PDF ] | |
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