|
|
Numéro de référence | BAT720 | ||
Description | SCHOTTKY BARRIER DIODE | ||
Fabricant | Jin Yu Semiconductor | ||
Logo | |||
1 Page
BAT720
SCHOTTKY BARRIER DIODE
FEATURES
High Switching Speed
Low Forward Voltage
Guard Ring Protected
APPLICATIONS
Voltage Clamping
Protection Circuits
SOT-23
MARKING: L61
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
VR DC Blocking Voltage
IO Continuous Forward Current
IFSM Non-repetitive peak Forward Current @ tp<10ms
PD Power Dissipation
RθJA Thermal Resistance from Junction to Ambient
Tj Junction Temperature
Tstg Storage Temperature
Value
40
500
2
350
286
125
-55~+150
Unit
V
mA
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Reverse voltage
Symbol
V(BR)
Test conditions
IR=100μA
Min Typ Max
40
Reverse current
IR VR=35V
100
Forward voltage
VF IF=500mA
550
Unit
V
μA
mV
JinYu
semiconductor
www.htsemi.com
|
|||
Pages | Pages 1 | ||
Télécharger | [ BAT720 ] |
No | Description détaillée | Fabricant |
BAT720 | Schottky barrier diode | NXP Semiconductors |
BAT720 | Schottky Diodes | MCC |
BAT720 | SCHOTTKY BARRIER DIODE | Jin Yu Semiconductor |
BAT720 | SCHOTTKY BARRIER DIODE | JCET |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |