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Kexin - Silicon Schottky Diodes

Numéro de référence BAT64
Description Silicon Schottky Diodes
Fabricant Kexin 
Logo Kexin 





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BAT64 fiche technique
SMD Type
Silicon Schottky Diodes
BAT64 series
Diodes
Features
For low-loss,fast-recovery, meter protection
bias isolation and clamping applications
Integrated diffused guard ring
Low forward current
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Absolute M axim um R atings Ta = 25
Param eter
Diode reverse voltage
Forward current
Average forward current (50/60Hz,sinus)
Surge forward current (t 10 m s)
Total power dissipation Ts = 61
Junction tem perature
Storage tem perature
Junction am bient (Note 1)
Junction soldering point
N o te
1. Package m ounted on epoxy pcb 40m m
Sym bol
VR
IF
IFAV
IFSM
P tot
Tj
T stg
R th JA
R th JS
Max
40
250
120
800
250
150
-55 to +150
495
355
40 m m m 1.5 m m /0.5cm 2 Cu
U n it
V
mA
mA
mA
mW
KW
KW
Electrical Characteristics Ta = 25
P aram eter
Symbol
Reverse current
IR
Forward voltage
Diode capacitance
VF
CT
Conditions
VR = 25 V,TA = 25
VR = 25 V,TA = 85
IF = 1 mA
IF = 10 mA
IF = 30 mA
IF = 100 mA
VR = 1 V,f = 1 MHz
Min Typ Max
2
200
320 350
385 430
440 520
570 750
46
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Unit
A
mV
V
V
V
pF
Marking
Type
Marking
BAT64
63s
BAT64-04
64s
BAT64-05
65s
BAT64-06
66s
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