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Numéro de référence | 6N25 | ||
Description | N-Channel MOSFET Transistor | ||
Fabricant | Inchange Semiconductor | ||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
6N25
·DESCRIPTION
·Drain Current ID= 6A@ TC=25℃
·Drain Source Voltage-
: VDSS= 250V(Min)
·Fast Switching Speed
·APPLICATIONS
·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Drain Current-continuous@ TC=25℃
250
±20
6
V
V
A
ID(puls)
Pulse Drain Current
24 A
Ptot Total Dissipation@TC=25℃
70 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
0.96 ℃/W
62.5 ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
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www.fineprint.cn
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Pages | Pages 2 | ||
Télécharger | [ 6N25 ] |
No | Description détaillée | Fabricant |
6N25 | N-Channel MOSFET Transistor | Inchange Semiconductor |
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