DataSheetWiki


ACE7331M fiches techniques PDF

ACE Technology - P-Channel 30-V MOSFET

Numéro de référence ACE7331M
Description P-Channel 30-V MOSFET
Fabricant ACE Technology 
Logo ACE Technology 





1 Page

No Preview Available !





ACE7331M fiche technique
ACE7331M
P-Channel 30-V MOSFET
Description
The ACE7331M utilize a high cell density trench process to provide low rDS(on) and to ensure minimal
power loss and heat dissipation. Typical applications are DC-DC converters and power management in
portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless
telephones.
Features
Low rDS(on) provides higher efficiency and extends battery life
Low thermal impedance copper lead frame DFN3x3-8L saves board space
Fast switching speed
High performance trench technology
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
TA=25
TA=70
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TA=25
TA=70
Operating temperature / storage temperature
Symbol Limit Units
VDS -30 V
VGS ±20 V
-13.4
ID
-11.0
A
IDM ±50 A
IS -2.1 A
3.5
PD
W
2.0
TJ/TSTG -55~150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient a
t <= 10 sec
Steady State
RθJA
Maximum
35
81
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.1 1

PagesPages 7
Télécharger [ ACE7331M ]


Fiche technique recommandé

No Description détaillée Fabricant
ACE7331M P-Channel 30-V MOSFET ACE Technology
ACE Technology

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche