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Numéro de référence | ACE7331M | ||
Description | P-Channel 30-V MOSFET | ||
Fabricant | ACE Technology | ||
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ACE7331M
P-Channel 30-V MOSFET
Description
The ACE7331M utilize a high cell density trench process to provide low rDS(on) and to ensure minimal
power loss and heat dissipation. Typical applications are DC-DC converters and power management in
portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless
telephones.
Features
• Low rDS(on) provides higher efficiency and extends battery life
• Low thermal impedance copper lead frame DFN3x3-8L saves board space
• Fast switching speed
• High performance trench technology
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
TA=25℃
TA=70℃
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TA=25℃
TA=70℃
Operating temperature / storage temperature
Symbol Limit Units
VDS -30 V
VGS ±20 V
-13.4
ID
-11.0
A
IDM ±50 A
IS -2.1 A
3.5
PD
W
2.0
TJ/TSTG -55~150 ℃
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient a
t <= 10 sec
Steady State
RθJA
Maximum
35
81
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.1 1
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Pages | Pages 7 | ||
Télécharger | [ ACE7331M ] |
No | Description détaillée | Fabricant |
ACE7331M | P-Channel 30-V MOSFET | ACE Technology |
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