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Numéro de référence | ACE4953B | ||
Description | Dual P-Channel Enhancement Mode Field Effect Transistor | ||
Fabricant | ACE Technology | ||
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ACE4953B
Dual P-Channel Enhancement Mode Field Effect Transistor
Description
The ACE4953B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate
charge. This device is suitable for use as a load switch or in PWM applications.
Features
VDS(V)=-20V
ID=-5.5A (VGS=-10V)
RDS(ON)<55mΩ (VGS=-10V)
RDS(ON)<58mΩ (VGS=-4.5V)
RDS(ON)<80mΩ (VGS=-2.5V)
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous) * AC TA=25 OC
TA=70 OC
VDSS
VGSS
ID
-20 V
±12 V
-5.5
A
-4.4
Drain Current (Pulse) * B
IDM -25 A
Power Dissipation
TA=25 OC
TA=70 OC
PD
2
W
1.5
Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC
Packaging Type
SOP-8
VER 1.2 1
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Pages | Pages 6 | ||
Télécharger | [ ACE4953B ] |
No | Description détaillée | Fabricant |
ACE4953B | Dual P-Channel Enhancement Mode Field Effect Transistor | ACE Technology |
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