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C6060 fiches techniques PDF

Toshiba - NPN Transistor - 2SC6060

Numéro de référence C6060
Description NPN Transistor - 2SC6060
Fabricant Toshiba 
Logo Toshiba 





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C6060 fiche technique
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6060
Power Amplifier Applications
Driver Stage Amplifier Applications
High-transition frequency: fT = 100 MHz (typ.)
2SC6060
Unit: mm
Absolute Maximum Ratings (Tc = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO 230 V
Collector-emitter voltage
VCEO 230 V
Emitter-base voltage
VEBO 5 V
Collector current
DC
pulse
Base current
Ta = 25°C
Collector power dissipation
Tc = 25°C
Junction temperature
Storage temperature range
IC
ICP
IB
PC
Tj
Tstg
1.0
2.0
100
2
20
150
55 to 150
A
A
mA
W
W
°C
°C
1: BASE
2: COLLECTOR
3: EMITTER
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 1.7 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2008-11-07
Free Datasheet http://www.datasheet4u.com/

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