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What is BAT54CDW?

This electronic component, produced by the manufacturer "SeCoS", performs the same function as "Surface Mount Schottky Barrier Diode Array".


BAT54CDW Datasheet PDF - SeCoS

Part Number BAT54CDW
Description Surface Mount Schottky Barrier Diode Array
Manufacturers SeCoS 
Logo SeCoS Logo 


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Elektronische Bauelemente
BAT54TW / BAT54ADW /BAT54CDW
BAT54SDW/ BAT54BRW
Surface Mount Schottky Barrier Diode Array
FEATURES
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
· Low Turn-on Voltage
· Fast Switching
· PN Junction Guard Ring for Transient and
ESD Protection
A
BC
MECHANICAL DATA
· Case: SOT-363, Molded Plastic
· Terminals: Solderable per MIL-STD-202,
Method 208
· Polarity: See Diagrams Below
· Weight: 0.016 grams (approx.)
· Mounting Position: Any
K
J
4
5
6O
3
2
1
H
DF
L
M
SOT-363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
F 0.30 0.40
H 1.80 2.20
J ¾ 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.25
a 0°
All Dimensions in mm
BAT54TW Marking: KLA BAT54ADW Marking: KL6
BAT54CDW Marking: KL7
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating
Symbol
Reverse Voltage
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
VR
PF
Forward Current (DC)
Junction Temperature
IF
TJ
Storage Temperature Range
Tstg
BAT54SDW Marking: KL8
Value
30
225
1.8
200 Max
125 Max
– 55 to +150
BAT54BRW Marking:KLB
Unit
Volts
mW
mW/°C
mA
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Typ
Max Unit
Reverse Breakdown Voltage (IR = 10 µA)
Total Capacitance (VR = 1.0 V, f = 1.0 MHz)
Reverse Leakage (VR = 25 V)
V(BR)R
30
— Volts
CT — 7.6 10 pF
IR — 0.5 2.0 µAdc
Forward Voltage (IF = 0.1 mAdc)
Forward Voltage (IF = 30 mAdc)
Forward Voltage (IF = 100 mAdc)
VF — 0.22 0.24 Vdc
VF — 0.41 0.5 Vdc
VF — 0.52 1.0 Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1
trr — — 5.0 ns
Forward Voltage (IF = 1.0 mAdc)
Forward Voltage (IF = 10 mAdc)
Forward Current (DC)
VF — 0.29 0.32 Vdc
VF — 0.35 0.40 Vdc
IF — — 200 mAdc
Repetitive Peak Forward Current
Non–Repetitive Peak Forward Current (t < 1.0 s)
IFRM
IFSM
— 300 mAdc
— 600 mAdc
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 2


Part Details

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BAT54CDThe function is 200mW Surface Mount Schottky Barrier Diode. Taiwan SemiconductorTaiwan Semiconductor
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BAT54CDWThe function is SCHOTTKY DIODE. TransysTransys

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