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Numéro de référence | BAS70-06T | ||
Description | SCHOTTKY DIODE | ||
Fabricant | Jin Yu Semiconductor | ||
Logo | |||
1 Page
SCHOTTKY DIODE
FEATURES
z Low Turn-on voltage
z Fast switching
BAS7 0T/-04T/-05T/-06T
SOT-523
BAS70T Marking: 7C
BAS70-04T Marking: 7D
BAS70-05T Marking: 7E
BAS70-06T Marking: 7F
Maximum Ratings @TA=25℃
Parameter
Peak Repetitive Peak reverse voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Non-Repetitive Peak Forward Surge Current @ t = 1.0s
Power Dissipation
Thermal Resistance Junction to Ambient Air
Storage temperature
Symbol
VRRM
VRWM
VR
IFM
IFSM
PD
RθJA
TSTG
Limits
70
70
100
150
833
-65-125
Unit
V
mA
A
mW
℃/W
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reveres recovery time
Symbol
V(BR) R
IR
VF
CD
trr
Test conditions
IR= 10µA
VR=50V
IF=1mA
IF=15mA
VR=0, f=1MHz
IF=IR=10mA,Irr=0.1xIR,
RL=100Ω
MIN MAX
UNIT
70 V
100
410
1000
2
nA
mV
pF
5 nS
JinYu
semiconductor
www.htsemi.com
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Pages | Pages 2 | ||
Télécharger | [ BAS70-06T ] |
No | Description détaillée | Fabricant |
BAS70-06 | Silicon Schottky Diode | Infineon |
BAS70-06 | General-purpose Schottky diodes | NXP Semiconductors |
BAS70-06 | SMALL SIGNAL SCHOTTKY DIODES | STMicroelectronics |
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