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Numéro de référence | BAS70-04T | ||
Description | SCHOTTKY BARRIER DIODE | ||
Fabricant | JCET | ||
Logo | |||
1 Page
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Diodes
BAS70T/-04T/-05T/06T SCHOTTKY BARRIER DIODE
FEATURES
z Low Turn-on Voltage
z Fast Switching
SOT-523
BAS70T Marking: 7C
BAS70-04T Marking: 7D
BAS70-05T Marking: 7E
MARKING:
BAS707BAS70-047BAS70-057
BAS70-06T Marking: 7F
BAS70-067
Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings @Ta=25℃
Parameter
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Symbol
VRRM
VRWM
VR
IFM
Non-Repetitive Peak Forward Surge Current @ t = 8.3ms
IFSM
Power Dissipation
Thermal Resistance Junction to Ambient
PD
RθJA
Junction temperature
Storage Temperature
TJ
TSTG
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Limit
70
70
100
150
667
125
-55~+150
Unit
V
mA
mA
mW
℃/W
℃
℃
Parameter
Reverse breakdown voltage
Reverse voltage leakag e current
Forward voltage
Diode capacitance
Reveres recovery time
Symbol
Test conditions
V(BR)
IR=10µA
IR VR=50V
VF
IF=1mA
IF=15mA
CD VR=0, f=1MHz
trr
IF=IR=10mA,Irr=0.1xIR,
RL=100Ω
Min Max
Unit
70 V
100
410
1000
2
nA
mV
pF
5 ns
www.cj-elec.com
1
E,Oct,2015
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Pages | Pages 4 | ||
Télécharger | [ BAS70-04T ] |
No | Description détaillée | Fabricant |
BAS70-04 | Silicon Schottky Diode | Infineon |
BAS70-04 | SILICON PLANAR DUAL SCHOTTKY BARRIER DIODES | Zetex Semiconductors |
BAS70-04 | General-purpose Schottky diodes | NXP Semiconductors |
BAS70-04 | SMALL SIGNAL SCHOTTKY DIODES | STMicroelectronics |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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