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B1040WS fiches techniques PDF

JCET - SCHOTTKY BARRIER DIODE

Numéro de référence B1040WS
Description SCHOTTKY BARRIER DIODE
Fabricant JCET 
Logo JCET 





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B1040WS fiche technique
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
B10 4 0 WS SCHOTTKY BARRIER DIODE
FEATURES
z Low Forward Voltage Drop
z Very Small SMD Package
APPLICATIONS
z Low Voltage Rectification
z High Efficiency DC/DC Conversion
z Switch Mode Power Supply
z Inverse Polarity Protection
z Low Power Consumption Applications
MARKING: SZ
SOD-323
The marking bar indicates the cathode
Solid dot = Green molding compound device,if none,
the normal device.
MAXIMUM RATINGS ( Ta=25unless otherwise noted )
Symbol
Parameter
VRRM
Peak Repetitive Reverse Voltage
VRWM
VR(RMS)
IO
Working Peak Reverse Voltage
RMS Reverse Voltage
Average Rectified Output Current
IFSM
PD
RΘJA
Tj
Tstg
Non-repetitive Peak Forward Surge Current @ t=8.3ms
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Value
40
28
1
5
250
400
125
-55~+150
Unit
V
V
A
A
mW
/W
ELECTRICAL CHARACTERISTICS(Ta=25unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max
Reverse breakdown voltage
Reverse current
V(BR)
IR
IR=1mA
VR =20V
40
50
Forward voltage
Total capacitance
IF=0.5A
VF
IF=0.7A
Ctot VR=10V,f=1MHz
0.51
0.55
20
Unit
V
uA
V
pF
www.cj-elec.com
1
A,Mar,2015

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