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Numéro de référence | DS521-30WB | ||
Description | Schottky barrier Diode | ||
Fabricant | WILLAS | ||
Logo | |||
WILLAS FM120-M+
WBFBP-02C Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
200V
DS521-30WTBHRU
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Schottky• BBaatrcrhieprroDcieosdsedesign, excellent power dissipation offers
better reverse leakage current and thermal resistance.
DESCRIP• TLoIOw Nprofile surface mounted application in order to
Silicon Ep• iLotaopwtximipaiolzwePeblarolnaoarsdsr,shpiagchee. fficiency.
• High current capability, low forward voltage drop.
FEATUR•EHSigh surge capability.
z S••mUGalutlralarsdhuriigrnhfga-sfcopereoemvdeosruvwonitltctiahngignegpt.yropteection.
z H•igShilicroenliaepbiitlaitxyial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
APPLICA• TRIoOHSNproduct for packing code suffix "G"
High speMedHeaslcowgheitncafhrneineigcprafoodlrudcdt eafottreapcatciokinng code suffix "H"
DFoVrDp-oRrOta••MbCEl,epaNoseexoqyt:ue:MiUpoBLmlod9eeo4d-nkVpt0P:l(ariCs.aett,ie.ced,MtSfcloOa.)bmDi-el1er2ep3taHhrodnanet,MP3, MD,CD-ROM,
Pb-Free•
Tperamcinkaalsg:Pelaitesd
atevrmaiinlaalsb, lseolderab
le
per
MIL-STD-75
,
0
Method 2026
RoHS p•rPoodlaurcityt :fIondricpaatecdkbiyncgatchooddeebasnduffix ”G”
Halogen• MfroeuentinpgroPodsuiticotn f:oAnrypacking code suffix “H”
Package outline
WBFBP-S0O2DC-123H
(1.0×0.6×0.5)
unit: mm
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
• Weight : Approximated 0.011 gram
MARKING: F MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
MaMxairmkinugmCodReatings and Electrical Characteristics,12Single13Diode1@4 Ta=2155℃ 16 18 10 115 120
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80 100 150 200 V
Maximum RMSPVaorltaagmeeter
SymVRbMoSl 14 21 28 Lim3i5t 42
56
70 Unit 105
140 V
Maximum DC Blocking Voltage
DCMarxeimveumrsAevveroalgteagFoerward Rectified Current
VDC 20 30 40 50 60
80 100 150 200 V
VRIO
30
1.0
V
A
MPeeaank FreorcwtaifrdyiSnugrgecCuurrrreenntt8.3 ms single half sine-wave IOIFSM
100 30
mA
A
superimposed on rated load (JEDEC method)
PeTaypkicfaol rTwhearrmdalsRuersgisetacnucerr(eNnotte 2)
Typical Junction Capacitance (Note 1)
IFSRMΘJA
CJ
1
40
A
120
℃
POowpeerartidngisTseimpapetiroatnure Range
PDTJ -55 to +125 100
-55 to +15m0 W
Storage Temperature Range
TSTG
- 65 to +175
T hermal Resistance from
Junction to AmbieCnHtARACTERISTICS
RθJA
1000
℃/W
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Maximum Forward Voltage at 1.0A DC
VF
0.50 0.70
0.85 0.9 0.92 V
JuMnacxtimiounmtAevmerpageeraRteuvreerse Current at @T A=25℃ Tj IR
Rated DC Blocking Voltage
@T A=125℃
125 0.5
10
℃
m
SNtoOrTaEgSe: temperature
Tstg
-55~+150
℃
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
E le2-cTthreircmaallRResaisttainncge sFro@m TJuanc=ti2on5t℃o Ambient
Parameter
Symbol
Min
Typ Max Unit
Conditions
Forward voltage
Rev2er0s1e 2cu-0rr6ent
VF
0.35 V
IF=10mA
IR
10 μA
WILLAVRS=1E0VLECTRONIC CORP
2012-11
WILLAS ELECTRONIC CORP.
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Pages | Pages 2 | ||
Télécharger | [ DS521-30WB ] |
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