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Numéro de référence | BAS21T | ||
Description | SWITCHING DIODE | ||
Fabricant | JCET | ||
Logo | |||
1 Page
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Diode
BAS21T SWITCHING DIODE
FEATURES
z Fast Switching Speed
z For General Purpose Switching Applications
z High Conductance
MARKING :T3
SOT-523
1
2
T3
T 3 Solid dot = Green molding compound device,
if none, the normal device
3
Maximum Ratings @Ta=25℃
Parameter
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current @t=8.3ms
Power Dissipation
Thermal Resistance Junction to Ambient
Operating Junction Temperature
Storage Temperature
Symbol
VRRM
VRWM
VR
IFM
IO
IFSM
PD
RθJA
TJ
TSTG
Limit
250
400
200
2.5
150
833
150
-55~+150
Unit
V
mA
mA
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Total capacitance
Reverse recovery time
Symbol
V(BR)
IR
VF
CT
t rr
Test conditions
IR= 100μA
VR=200V
IF=100mA
IF=200mA
VR=0V,f=1MHz
IF=IR=30mA,Irr=0.1XIR,
RL=100Ω
Min
250
Max
100
1
1.25
5
50
Unit
V
nA
V
pF
ns
www.cj-elec.com
1
B,Oct,2014
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Pages | Pages 4 | ||
Télécharger | [ BAS21T ] |
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