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JCET - SWITCHING DIODE

Numéro de référence BAS21S
Description SWITCHING DIODE
Fabricant JCET 
Logo JCET 





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BAS21S fiche technique
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
BAS21/A/C/S SWITCHING DIODE
FEATURES
z Fast Switching Speed
z Surface Mount Package Ideally Suited for Automatic Insertion
z For General Purpose Switching Applications
z High Conductance
BAS21
BAS21A
BAS21C
BAS21S
SOT-23
MARKING: JS
JS
MARKING:JS2 MARKING:JS3
JS2 JS3
MARKING:JS4
JS4
JS JS2
JS3
JS4
Solid dot = Green molding compound device,
if none, the normal device
Maximum Ratings @Ta=25
Parameter
Repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
Forward continuous current
Average rectified output current
Non-Repetitive Peak Forward Surge Current @t=8.3ms
Repetitive peak forward surge current
Power dissipation
Thermal resistance junction to ambient
Junction temperature
Storage temperature range
Symbol
VRRM
VRWM
VR
IFM
IO
IFSM
IFRM
PD
RθJA
TJ
TSTG
Limit
250
400
200
2.5
625
225
555
150
-55~+150
Unit
V
mA
mA
A
mA
mW
/W
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reveres recovery time
Symbol
Test conditions
Min Max Unit
V(BR)
IR= 100µA
250 V
IR VR=200V
0.1 µA
VF
IF=100mA
IF=200mA
CD VR=0V, f=1MHz
1000
1250
5
mV
pF
trr IF=IR=30mA,Irr=0.1×IR,RL=100Ω
50 ns
www.cj-elec.com
1
D,Nov,2015

PagesPages 4
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