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JCET - SWITCHING DIODE

Numéro de référence UMN1N
Description SWITCHING DIODE
Fabricant JCET 
Logo JCET 





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UMN1N fiche technique
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-353 Plastic-Encapsulate Diodes
UMN1N SWITCHING DIODE
SOT-353
FEATURES
Multiple Diodes in One Small Surface Mount Package
Diode Characteristics are Matched in the Package
APPLICATIONS
High Speed Switching
MARKING: N1
++
+
+
N1 N1
+-+
+-+
Solid dot = Green molding compound device,
if none,the normal device.
MAXIMUM RATINGS ( Ta=25unless otherwise noted )
Symbol
Parameter
VR Continuous Reverse Voltage
IO Continuous Forward Current
IFM Peak Forward Current
IFSM Non-repetitive Peak Forward Surge Current@t= 8 . 3 m s
PD Power Dissipation
RθJA Thermal Resistance From Junction To Ambient
TJ Junction Temperature
Tstg Storage Temperature
Value
80
25
80
0.25
150
833
150
-55~+150
Unit
V
mA
mA
A
mW
/W
ELECTRICAL CHARACTERISTICS(Ta=25unless otherwise specified)
Parameter
Reverse voltage
Symbol
V(BR)
Test conditions
IR=100μA
Min Typ Max
80
Reverse current
IR VR=70V
0.1
Forward voltage
Total capacitance
Reverse recovery time
VF IF=5mA
Ctot VR=6V,f=1MHz
trr IF= IR=5mA, VR=6V, RL=50Ω
0.9
3.5
4
Unit
V
μA
V
pF
ns
www.cj-elec.com
1
C,Mar,2016

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