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BAS40W-06 fiches techniques PDF

JCET - SCHOTTKY BARRIER DIODE

Numéro de référence BAS40W-06
Description SCHOTTKY BARRIER DIODE
Fabricant JCET 
Logo JCET 





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BAS40W-06 fiche technique
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Diodes
SOT-323
BAS40W/-04/-05/-06 SCHOTTKY BARRIER DIODE
FEATURES
z Low Forward Voltage
z Fast Switching
BAS40W MARKING: 43•
MARKING:
BAS40W
BAS40W-06 MARKING: 46 BAS40W-05 MARKING45 BAS40W-04 MARKING44
BAS40W-06
BAS40W-05
BAS40W-04
Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings @Ta=25
Parameter
Symbol
Limit
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
Forward continuous current
VRRM
VRWM
VR
IFM
40
200
Power dissipation
PD 150
Thermal resistance junction to ambient
RθJA
667
Junction temperature
TJ 125
Storage temperature range
TSTG
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reverse recovery time
Symbol
V(BR)
IR
VF
CD
t rr
Test conditions
IR= 10μA
VR=30V
IF=1mA
IF=40mA
VR=0,f=1MHz
Irr=1mA, IR=IF=10mA
RL=100
Min
40
www.cj-elec.com
1
Unit
V
mA
mW
/W
Max
200
380
1000
5
5
Unit
V
nA
mV
pF
ns
D,Oct,2015

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