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FM24V02A fiches techniques PDF

Cypress Semiconductor - 256-Kbit (32K x 8) Serial (I2C) F-RAM

Numéro de référence FM24V02A
Description 256-Kbit (32K x 8) Serial (I2C) F-RAM
Fabricant Cypress Semiconductor 
Logo Cypress Semiconductor 





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FM24V02A fiche technique
FM24V02A
256-Kbit (32K × 8) Serial (I2C) F-RAM
256-Kbit (32K × 8) Serial (I2C) F-RAM
Features
256-Kbit ferroelectric random access memory (F-RAM)
logically organized as 32K × 8
High-endurance 100 trillion (1014) read/writes
151-year data retention (See the Data Retention and
Endurance table)
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast two-wire serial interface (I2C)
Up to 3.4-MHz frequency[1]
Direct hardware replacement for serial EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Device ID
Manufacturer ID and Product ID
Low power consumption
175-A active current at 100 kHz
150-A standby current
8-A sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 C to +85 C
8-pin small outline integrated circuit (SOIC) package
Restriction of hazardous substances (RoHS) compliant
Logic Block Diagram
Functional Description
The FM24V02A is a 256-Kbit nonvolatile memory employing an
advanced ferroelectric process. An F-RAM is nonvolatile and
performs reads and writes similar to a RAM. It provides reliable
data retention for 151 years while eliminating the complexities,
overhead, and system-level reliability problems caused by
EEPROM and other nonvolatile memories.
Unlike EEPROM, the FM24V02A performs write operations at
bus speed. No write delays are incurred. Data is written to the
memory array immediately after each byte is successfully
transferred to the device. The next bus cycle can commence
without the need for data polling. In addition, the product offers
substantial write endurance compared with other nonvolatile
memories. F-RAM also exhibits much lower power during writes
than EEPROM because write operations do not require an
internally elevated power supply voltage for write circuits. The
FM24V02A is capable of supporting 1014 read/write cycles, or
100 million times more write cycles than EEPROM.
These capabilities make the FM24V02A ideal for nonvolatile
memory applications, requiring frequent or rapid writes.
Examples range from data logging, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of EEPROM can cause data loss. The
combination of features allows more frequent data writing with
less overhead for the system.
The FM24V02A provides substantial benefits to users of serial
EEPROM as a hardware drop-in replacement. The device
incorporates a read-only Device ID that allows the host to
determine the manufacturer, product density, and product
revision. The device specifications are guaranteed over an
industrial temperature range of –40 C to +85 C.
For a complete list of related resources, click here.
Counter
Address
Latch
15
32 K x 8
F-RAM Array
SDA
SCL
WP
A0-A2
Serial to Parallel
Converter
Control Logic
8
Data Latch
8
8
Device ID and
Manufacturer ID
Note
1.
The FM24V02A does not meet the NXP I2C specification in
to the DC Electrical Characteristics table for more details.
the
Fast-mode
Plus
(Fm+,
1
MHz)
for
IOL
and
in
the
High
Speed
Mode
(Hs-mode,
3.4
MHz)
for
Vhys.
Refer
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-90839 Rev. *G
• San Jose, CA 95134-1709 • 408-943-2600
Revised January 14, 2016

PagesPages 19
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